Fix Bamboo DDR SDRAM initialization (problem with onboard SDRAM)

Patch by Stefan Roese, 15 Nov 2005
This commit is contained in:
Stefan Roese
2005-11-15 16:04:58 +01:00
parent ea339205a9
commit fd49bf0214
3 changed files with 140 additions and 71 deletions

View File

@@ -31,6 +31,8 @@ void ext_bus_cntlr_init(void);
void configure_ppc440ep_pins(void);
int is_nand_selected(void);
unsigned char cfg_simulate_spd_eeprom[128];
gpio_param_s gpio_tab[GPIO_GROUP_MAX][GPIO_MAX];
#if 0
{ /* GPIO Alternate1 Alternate2 Alternate3 */
@@ -380,7 +382,7 @@ int checkboard(void)
/*************************************************************************
*
* fixed_sdram_init -- Bamboo has one bank onboard sdram (plus DIMM)
* init_spd_array -- Bamboo has one bank onboard sdram (plus DIMM)
*
* Fixed memory is composed of :
* MT46V16M16TG-75 from Micron (x 2), 256Mb, 16 M x16, DDR266,
@@ -397,24 +399,40 @@ int checkboard(void)
* PLB @ 133 MHz
*
************************************************************************/
void fixed_sdram_init(void)
static void init_spd_array(void)
{
/*
* clear this first, if the DDR is enabled by a debugger
* then you can not make changes.
*/
mtsdram(mem_cfg0, 0x00000000); /* Disable EEC */
cfg_simulate_spd_eeprom[8] = 0x04; /* 2.5 Volt */
cfg_simulate_spd_eeprom[2] = 0x07; /* DDR ram */
/*--------------------------------------------------------------------
* Setup for board-specific specific mem
*------------------------------------------------------------------*/
/*
* Following for CAS Latency = 2.5 @ 133 MHz PLB
*/
mtsdram(mem_b0cr, 0x00082001);
mtsdram(mem_b1cr, 0x00000000);
mtsdram(mem_b2cr, 0x00000000);
mtsdram(mem_b3cr, 0x00000000);
#ifdef CONFIG_DDR_ECC
cfg_simulate_spd_eeprom[11] = 0x02; /* ECC ON : 02 OFF : 00 */
cfg_simulate_spd_eeprom[31] = 0x08; /* bankSizeID: 32MB */
cfg_simulate_spd_eeprom[3] = 0x0C; /* num Row Addr: 12 */
#else
cfg_simulate_spd_eeprom[11] = 0x00; /* ECC ON : 02 OFF : 00 */
cfg_simulate_spd_eeprom[31] = 0x10; /* bankSizeID: 64MB */
cfg_simulate_spd_eeprom[3] = 0x0D; /* num Row Addr: 13 */
#endif
cfg_simulate_spd_eeprom[4] = 0x09; /* numColAddr: 9 */
cfg_simulate_spd_eeprom[5] = 0x01; /* numBanks: 1 */
cfg_simulate_spd_eeprom[0] = 0x80; /* number of SPD bytes used: 128 */
cfg_simulate_spd_eeprom[1] = 0x08; /* total number bytes in SPD device = 256 */
cfg_simulate_spd_eeprom[21] = 0x00; /* not registered: 0 registered : 0x02*/
cfg_simulate_spd_eeprom[6] = 0x20; /* Module data width: 32 bits */
cfg_simulate_spd_eeprom[7] = 0x00; /* Module data width continued: +0 */
cfg_simulate_spd_eeprom[15] = 0x01; /* wcsbc = 1 */
cfg_simulate_spd_eeprom[27] = 0x50; /* tRpNs = 20 ns */
cfg_simulate_spd_eeprom[29] = 0x50; /* tRcdNs = 20 ns */
cfg_simulate_spd_eeprom[30] = 45; /* tRasNs */
cfg_simulate_spd_eeprom[18] = 0x0C; /* casBit (2,2.5) */
cfg_simulate_spd_eeprom[9] = 0x75; /* SDRAM Cycle Time (cas latency 2.5) = 7.5 ns */
cfg_simulate_spd_eeprom[23] = 0xA0; /* SDRAM Cycle Time (cas latency 2) = 10 ns */
cfg_simulate_spd_eeprom[25] = 0x00; /* SDRAM Cycle Time (cas latency 1.5) = N.A */
cfg_simulate_spd_eeprom[12] = 0x82; /* refresh Rate Type: Normal (15.625us) + Self refresh */
}
long int initdram (int board_type)
@@ -422,9 +440,10 @@ long int initdram (int board_type)
long dram_size = 0;
/*
* First init bank0 (onboard sdram) and then configure the DIMM-slots
* First write simulated values in eeprom array for onboard bank 0
*/
fixed_sdram_init();
init_spd_array();
dram_size = spd_sdram (0);
return dram_size;